Work

All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate Insulator

Year: 2004

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.200306187

Authors: R. Schroeder, L. A. Majewski, M. Grell

Institution: University of Sheffield

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2056130702

FWCI: 13.7

Cites: 22

Cited by: 219

Related to: 10