The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells
Year: 2008
Type: article
Authors: S Khatsevich, D H Rich
Institution: Ben-Gurion University of the Negev
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2056240617