Year: 2008
Type: article
Abstract: Vertical structures of SiO2 sandwiched between a top tungsten electrode and conducting nonmetallic substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 μs) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 104 were demonstrated.
Source: Applied Physics Letters
DOI: 10.1063/1.3045951
Authors: Jun Yao, Lin Zhong, Douglas Natelson, James M. Tour
Institution: Rice University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2056527262