Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-κ/metal gate bulk FinFET devices
Year: 2011
Type: article
Source: Microelectronic Engineering
Authors: Yiming Li, Hui-Wen Cheng, Chun-Yen Yiu, Hsin-Wen Su
Institution: National Yang Ming Chiao Tung University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2056565607