Low noise, low power consumption high electron mobility transistors amplifier, for temperatures below 1 K
Year: 2003
Type: article
Source: Review of Scientific Instruments
DOI: 10.1063/1.1532539
Authors: N. Oukhanski, M. Grajcar, E. Il’ichev, H.-G. Meyer
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2056730712