Work

Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer

Year: 1998

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(98)00221-8

Authors: Nobuhiko P Kobayashi, Junko T. Kobayashi, Won-Jin Choi, P Daniel Dapkus, Xingang Zhang, Daniel H. Rich

Institution: University of Southern California

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2057580672

FWCI: 1.077

Cites: 12

Cited by: 16

Related to: 10