Year: 2010
Type: article
Abstract: Bismuth telluride is the most well-known compound for thermoelectric cooling and generation applications at low temperature regime. Recently, nanostructured thermoelectrics is found to be an effective route of improving thermoelectric properties due to its notably reduced thermal conductivity. Here, we investigate the growth mechanism of mutually crossed nanoplatelets formed in the initial stage of electrodeposition of films on Ti substrates. The individual nanoplatelet is identified to be a single crystal disk with [001] as a surface normal. The preferential growth of {0001}-oriented crystal is attributed to anisotropic bonding nature and electrical conductivity of . The specific interplanar angles measured from different mutually crossed nanoplatelets suggest and to be the twin planes of two {0001}-oriented crystals. A model based on crystal twinning during electrocrystallization of is presented to explain the observed crystal morphology of mutually crossed nanoplatelets. The understanding of crystal growth mechanism shall lead to the effective strategy to develop nanostructured thermoelectrics by electrocrystallization.
DOI: 10.1149/1.3493591
Authors: Chien-Neng Liao, Hsiao-Dung Shih, Po-Wen Su
Institution: National Tsing Hua University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Funder: National Science Council
Awards: G3597894640, G5960834559
OpenAlex ID: W2057686741