Work

Metal to Insulator Transition in Epitaxial Graphene Induced by Molecular Doping

Year: 2008

Type: article

Abstract: The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator, is one of the key challenges of modern electronics. By employing angle-resolved photoemission spectroscopy we find that a reversible metal to insulator transition and a fine-tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for electronics applications, as well as provide new opportunities for studying the hole doping regime of the Dirac cone in graphene.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.101.086402

Authors: S. Y. Zhou, D. A. Siegel, A. V. Fedorov, A. Lanzara

Institutions: Lawrence Berkeley National Laboratory, University of California, Berkeley, Advanced Light Source

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, U.S. Department of Energy, Division of Materials Sciences and Engineering

Award: G193590374