Work

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Year: 2006

Type: article

Abstract: Room temperature electron mobility of 1170cm2∕Vs is obtained in an undoped, lattice-matched, Al0.82In0.18N∕GaN field-effect transistor heterostructure, while keeping a high (2.6±0.3)×1013cm−2 electron gas density intrinsic to the Al0.82In0.18N∕GaN material system. This results in a two-dimensional sheet resistance of 210Ω∕◻. The high mobility of these layers, grown by metal-organic vapor phase epitaxy on sapphire substrate, is obtained thanks to the insertion of an optimized AlN interlayer, reducing the alloy related interface roughness scattering.

Source: Applied Physics Letters

DOI: 10.1063/1.2335390

Authors: M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, N. Grandjean

Institution: École Polytechnique Fédérale de Lausanne

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2058717737

FWCI: 12.35

Cites: 14

Cited by: 323

Related to: 10