Year: 2010
Type: article
Abstract: The ability to control and detect single electrons is paramount for the implementation of a scalable charge-based quantum computer and single-electron memory devices. Here, we report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) that are electrically connected to an electron reservoir. The sensing device is a single-electron transistor patterned in close proximity to the DQD. We observe steplike behavior and shifts of the Coulomb blockade oscillations in the detector’s current as the reservoir’s potential is swept. By means of a classical capacitance model, we demonstrate that these features can be used to detect changes in the DQD charge occupancy.
Source: Applied Physics Letters
DOI: 10.1063/1.3524490
Authors: A. Rossi, T. Ferrus, G. J. Podd, D. A. Williams
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2059099545