Work

Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate

Year: 2014

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.4866401

Authors: Lu Liu, Ya-Hsi Hwang, Yuyin Xi, Fan Ren, Valentin Craciun, Stephen J. Pearton, Gwangseok Yang, Hong-Yeol Kim, Jihyun Kim

Institutions: University of Florida, National Institute for Laser Plasma and Radiation Physics, Korea University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Defense, Korea University, National Research Foundation of Korea

OpenAlex ID: W2059125539

FWCI: 0.803

Cites: 18

Cited by: 18

Related to: 10