Work

Experiments on Ge-GaAs heterojunctions

Year: 1962

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(62)90115-6

Author: R.L. Anderson

Institution: IBM (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2059166979

FWCI: 11.16

Cites: 6

Cited by: 1,138

Related to: 10