Work

The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon

Year: 1987

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.338342

Authors: Ravi Subrahmanyan, Hisham Z. Massoud, Richard B. Fair

Institution: Duke University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Semiconductor Research Corporation

OpenAlex ID: W2059534877

FWCI:

Cites: 8

Cited by: 6

Related to: 10