Work

Ni-doped GST materials for high speed phase change memory applications

Year: 2015

Type: article

Source: Materials Research Bulletin

DOI: 10.1016/j.materresbull.2015.01.016

Authors: Yueqin Zhu, Zhonghua Zhang, Sannian Song, Huaqing Xie, Zhitang Song, Xiaoyun Li, Lanlan Shen, Le Li, Liangcai Wu, Bo Liu

Institutions: Shanghai Polytechnic University, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, State Key Laboratory of Functional Materials for Informatics

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G2085162751, G3219903371, G4166559171, G472187076

OpenAlex ID: W2059891917

FWCI: 2.265

Cites: 16

Cited by: 76

Related to: 10