Year: 2007
Type: article
Abstract: A simple yet highly reproducible method to suppress contamination of graphene at low temperature inside the cryostat is presented. The method consists of applying a current of several milliamperes through the graphene device, which is here typically a few microns wide. This ultrahigh current density is shown to remove contamination adsorbed on the surface. This method is well suited for quantum electron transport studies of undoped graphene devices, and its utility is demonstrated here by measuring the anomalous quantum Hall effect.
Source: Applied Physics Letters
DOI: 10.1063/1.2789673
Authors: J. Moser, A. Barreiro, A. Bachtold
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2060386610