Work

Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line

Year: 2006

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.45.4955

Authors: Kyung Sik Mun, Jae-Ho Kim, Tae Whan Kim, Kae Dal Kwack

Institution: Hanyang University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2060397676

FWCI:

Cites: 13

Cited by: 4

Related to: 10