Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon
Year: 2000
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.372017
Institution: Alcatel-Lucent (France)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2061028492