Year: 2006
Type: article
Abstract: Studies of spin manipulation in semiconductors have benefited from the possibility of growing these materials of high quality on top of optically active III–V systems. The induced electroluminescence in these layered semiconductor heterostructures has been used for a reliable spin detection. In semiconductors with strong spin-orbit (SO) interaction, the sensitivity of vertical devices may be insufficient, however, because of the separation of the spin aligner part and the spin detection region by one or more heterointerfaces and because of the short spin coherence length. Here we demonstrate that highly sensitive spin detection can be achieved using a lateral arrangement of the spin polarized and optically active regions. Using our co-planar spin-polarized light-emitting diodes we detect electrical field induced spin generation in a semiconductor heterojunction two-dimensional hole gas. The polarization results from spin asymmetric recombination of injected electrons with strongly SO coupled two-dimensional holes. The possibility of detecting spin polarization of a two-dimensional electron gas (2DEG) induced by the local strayfield of a magnetized Co microstructure deposited on top of the 2DEG close to the co-planar diode junction is also demonstrated.
Source: Applied Physics Letters
DOI: 10.1063/1.2180442
Authors: B. Kaestner, J. Wunderlich, J. Sinova, T. Jungwirth
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2061455554