Work

CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation

Year: 2013

Type: article

Source: Theoretical Chemistry Accounts

DOI: 10.1007/s00214-013-1419-8

Authors: R. Boichot, N. Coudurier, F. Mercier, A. Claudel, N. Baccar, A. Milet, E. Blanquet, M. Pons

Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Université Joseph Fourier, Science et Ingénierie des Matériaux et Procédés, Acerde (France)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2061519036

FWCI: 0.876

Cites: 42

Cited by: 17

Related to: 10