Work

Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

Year: 2000

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1326046

Authors: N. S. Saks, A. K. Agarwal

Institutions: United States Naval Research Laboratory, Wolfspeed, Inc. (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2061756481

FWCI: 4.998

Cites: 14

Cited by: 176

Related to: 9