Work

Ordered Semiconducting Nitrogen-Graphene Alloys

Year: 2012

Type: article

Abstract: Being a semimetal, pure monolayer graphene cannot be used directly in devices which rely on controlled and reliable transistor operations. Substitutional doping of graphene by nitrogen at macroscopic concentrations is predicted to create two monolayer compounds that are both stable and semiconducting with sizable band gaps.

Source: Physical Review X

DOI: 10.1103/physrevx.2.011003

Authors: H. J. Xiang, B. Huang, Z. Y. Li, S.-H. Wei, J. L. Yang, X. G. Gong

Institutions: Fudan University, National Laboratory of the Rockies, University of Science and Technology of China

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $4,200

Funders: U.S. Department of Energy, National Natural Science Foundation of China, Laboratory Directed Research and Development, National Renewable Energy Laboratory