Year: 2011
Type: article
Abstract: We study the effect of vertical electric field (E-field) on the electronic properties of multilayer graphene. We show that the effective mass, electron velocity, and density-of-state of a bilayer graphene are modified under the E-field. We also study the transformation of the band structure of multilayer graphenes. E-field induces finite (zero) band gap in the even (odd)-layer ABA-stacking graphene. On the other hand, finite band gap is induced in all ABC-stacking graphene. We also identify the optimum E-field to obtain the maximum band gap in the multilayer graphenes. Finally, we compare our results with the experimental results of a field-effect-transistor.
Source: Applied Physics Letters
DOI: 10.1063/1.3595335
Authors: S. Bala Kumar, Jing Guo
Institution: University of Florida
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2061938530