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Resolution enhancement for advanced mask aligner lithography using phase-shifting photomasks

Year: 2014

Type: article

Abstract: The application of the phase-shift method allows a significant resolution enhancement for proximity lithography in mask aligners. Typically a resolution of 3 µm (half-pitch) at a proximity distance of 30 µm is achieved utilizing binary photomasks. By using an alternating aperture phase shift photomask (AAPSM), a resolution of 1.5 µm (half-pitch) for non-periodic lines and spaces pattern was demonstrated at 30 µm proximity gap. In a second attempt a diffractive photomask design for an elbow pattern having a half-pitch of 2 µm was developed with an iterative design algorithm. The photomask was fabricated by electron-beam lithography and consists of binary amplitude and phase levels.

Source: Optics Express

DOI: 10.1364/oe.22.016310

Authors: T. Weichelt, U. Vogler, L. Stuerzebecher, R. Voelkel, U. D. Zeitner

Institutions: Friedrich Schiller University Jena, Suss Microoptics (Switzerland)

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

OpenAlex ID: W2062623692

FWCI: 3.357

Cites: 13

Cited by: 41

Related to: 10