Work

Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy

Year: 1996

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/bf02666622

Authors: S. Sethi, P. K. Bhattacharya

Institution: University of Michigan

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2063391822

FWCI: 0.729

Cites: 49

Cited by: 34

Related to: 10