Work

Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC

Year: 2009

Type: article

Source: Physica B Condensed Matter

DOI: 10.1016/j.physb.2009.08.128

Authors: Maya Marinova, Georgios Zoulis, Teddy Robert, Frederic Mercier, Alkioni Mantzari, Irina Galben, Olivier Kim-Hak, Jean Lorenzzi, Sandrine Juillaguet, Didier Chaussende, Gabriel Ferro, Jean Camassel, Efstathios K. Polychroniadis

Institutions: Aristotle University of Thessaloniki, Centre National de la Recherche Scientifique, Université Montpellier 2, Institut polytechnique de Grenoble, Laboratoire des Matériaux et du Génie Physique, Laboratoire des Multimatériaux et Interfaces

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: European Commission

OpenAlex ID: W2063649946

FWCI: 0.264

Cites: 7

Cited by: 4

Related to: 10