Year: 2003
Type: article
Abstract: Use of high ramp rates (>400°C/s) in rapid thermal annealing after ion implantation leads to experimentally observed improvements in junction depth and the reverse narrow-channel effect. However, a straightforward explanation for this effect has been lacking. Via modeling, we find that increasing the heating rate permits clusters with dissociation energies lower than the maximum of 3.5-3.7 eV to survive to higher temperatures. This improved survival delays the increase in Si interstitial concentrations near the top of an annealing spike, which decreases the profile spreading. © 2003 The Electrochemical Society. All rights reserved.
DOI: 10.1149/1.1627354
Institution: University of Illinois Urbana-Champaign
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
Funder: National Science Foundation
OpenAlex ID: W2064698951