Year: 1976
Type: article
Abstract: The solid solubility of Bi (an isoelectronic center) in crystals, grown by a thermal gradient transport technique from Bi‐Ga alloys at ∼1050°C, has been determined by emission spectroscopic analysis. These results, together with earlier data on solution‐grown platelets, are thermodynamically analyzed by means of liquidus isotherms and activities calculated from a recent theory of regular associated liquid solutions applicable to the Ga‐P‐Bi system, permitting the evaluation of the equilibrium constant for Bi incorporation according to . This leads to the calculation of the solid solubility isotherms for Bi in over a wide temperature range. It is shown that in equilibrium Bi is incorporated on phosphorus sites. Furthermore, the pseudo‐binary solidus curve is retrograde and compares favorably with the results of an estimate based on the solubility of Bi in Ge and Si. The solubility of Bi in increases with increasing temperature. Although the measured values at ∼1050°C are low (∼10 17 atoms cm −3 ), it is predicted that doping levels as high as ∼10 19 atoms cm −3 should be possible by a suitable high temperature crystal growth technique.
DOI: 10.1149/1.2133001
Language: English
Subfield: General Materials Science
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2064919872