Work

Microcrack-induced strain relief in GaN∕AlN quantum dots grown on Si(111)

Year: 2007

Type: article

Source: Physical Review B

DOI: 10.1103/physrevb.75.075306

Authors: G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, B. Damilano

Institutions: Ben-Gurion University of the Negev, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: Latvian

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Israel Science Foundation

OpenAlex ID: W2064977348

FWCI: 3.043

Cites: 33

Cited by: 20

Related to: 10