Work

Tunable graphene system with two decoupled monolayers

Year: 2008

Type: article

Abstract: The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov–de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.

Source: Applied Physics Letters

DOI: 10.1063/1.3012369

Authors: H. Schmidt, T. Lüdtke, P. Barthold, E. McCann, V. I. Fal’ko, R. J. Haug

Institutions: Leibniz University Hannover, Lancaster University

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: Engineering and Physical Sciences Research Council, European Social Fund

Awards: Modelling transport in graphene-based transistors, G5909272538