Electrical response of amorphous silicon thin-film transistors under mechanical strain
Year: 2002
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.1513187
Authors: H. Gleskova, S. Wagner, W. Soboyejo, Z. Suo
Institution: Princeton University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2065327974