Work

Controllable cubic and hexagonal GaN growth on GaAs(001) substrates by molecular beam epitaxy

Year: 2000

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(99)00743-5

Authors: H Chen, Z.Q Li, H.F Liu, L Wan, M.H Zhang, Q Huang, J.M Zhou, Y Luo, Y.J Han, K Tao, N Yang

Institutions: Chinese Academy of Sciences, Institute of Physics, Tsinghua University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2065846504

FWCI: 1.615

Cites: 17

Cited by: 11

Related to: 10