Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
Year: 2002
Type: article
Authors: Su-Huai Wei, S. B. Zhang
Institution: National Laboratory of the Rockies
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: U.S. Department of Energy
OpenAlex ID: W2066013233