Year: 2010
Type: article
Abstract: The regular Einstein relation, connecting the coefficient of ambipolar diffusion and the Dember field with mobilities, is generalized for the case of an interacting electron-hole plasma. The calculations are presented for a nondegenerate plasma injected by light into semiconductors of silicon and germanium type. The Debye-Huckel correlation and the Wigner-Seitz exchange terms are considered. Corrections to the mobilities of carriers due to the difference between average and acting electric fields within the electron-hole plasma are taken into account. The deviation of the generalized relation from the regular Einstein relation is pronounced at low temperatures and can explain the anomaly of the coefficient of ambipolar diffusion, recently discovered experimentally.
Source: Physical Review Letters
Author: A. L. Efros
Institution: University of Utah
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2066606246