Year: 1969
Type: article
Abstract: New de Haas-van Alphen measurements in indium are reported, in which emphasis is placed on very-low-frequency oscillations and on the effective masses of the carriers. A Fermi surface model is deduced and four orbit sizes from this model are used in fitting the four parameters of an empirical pseudopotential calculation. The resulting potentials are: V (111) = -0·7617 eV, V (002) = -0·280 eV, V (200) = +0·0922 eV λ (a spin-orbit parameter) = +0·1756 eV. The band structure and Fermi surface computed with these parameters are shown to be consistent with the majority of experimental data.
Authors: A J Hughes, J P G Shepherd
Language: English
Subfield: Mechanical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2067453053