Work

Semiconductor Analysis Using Finite Elements—Part II: IGFET and BJT Case Studies

Year: 1981

Type: article

Source: IBM Journal of Research and Development

DOI: 10.1147/rd.254.0246

Authors: G. D. Hachtel, M. H. Mack, R. R. O'Brien

Institutions: IBM Research - Thomas J. Watson Research Center, IBM (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Council

OpenAlex ID: W2067608485

FWCI: 4.456

Cites: 24

Cited by: 16

Related to: 10