Work

Influence of Si(111) √3×√3 - R30 ° -Sb surface phase on the formation and conductance of low-dimensional magnesium silicide layer on Si(111) substrate

Year: 2011

Type: article

Abstract: Using electron energy loss spectroscopy, Raman spectroscopy, and conductance measurements in the temperature range 20–500 K we have investigated doping of two-dimensional Mg silicide using the Sb surface phase. The doping process was performed in two steps including formation of the Sb surface phase followed by reactive deposition of Mg. It was shown that additional levels appear in the Mg2Si band gap resulting in increasing conductance at high temperatures. The Sb doped Mg2Si layer has a band gap of about 1.2 eV.

Source: Physics Procedia

DOI: 10.1016/j.phpro.2011.01.014

Authors: Dmitry L. Goroshko, Konstantin N. Galkin, Nikolay G. Galkin

Institutions: Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

Funders: Russian Foundation for Basic Research, Far East Branch, Russian Academy of Sciences

Award: G4661097702