Drain-Source Symmetric Artificial Neural Network-Based FET Model with Robust Extrapolation Beyond Training Data
Year: 2007
Type: conference-paper
Authors: Jianjun Xu, Daniel Gunyan, Masaya Iwamoto, Jason M. Horn, Alex Cognata, David E. Root
Institution: Agilent Technologies (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2067965306