Work

An impact ionization model for two-dimensional device simulation

Year: 1985

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1985.21955

Authors: T. Thurgate, N. Chan

Institution: Intel (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2068004485

FWCI: 3.78

Cites: 7

Cited by: 36

Related to: 10