Work

Ultralong Dephasing Time in InGaAs Quantum Dots

Year: 2001

Type: article

Abstract: We measure a dephasing time of several hundred picoseconds at low temperature in the ground-state transition of strongly confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian line shape with a lifetime-limited zero-phonon line and a broadband from elastic exciton-acoustic phonon interactions.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.87.157401

Authors: P. Borri, W. Langbein, S. Schneider, U. Woggon, R. Sellin, D. Ouyang, D. Bimberg

Institutions: TU Dortmund University, Technische Universität Berlin

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2068116351

FWCI: 37.13

Cites: 23

Cited by: 1,003

Related to: 10