Time-of-flight secondary ion mass spectrometry depth profiling of multiple quantum well II–VI semiconductors using negative cluster ions
Year: 1999
Type: article
DOI: 10.1116/1.590543
Institution: University at Buffalo, State University of New York
Language: English
Subfield: Computational Mechanics
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2068329282
