Work

Cooling Limits for GaN HEMT Technology

Year: 2013

Type: conference-paper

Source: Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium

DOI: 10.1109/csics.2013.6659222

Authors: Yoonjin Won, Jungwan Cho, Damena Agonafer, Mehdi Asheghi, Kenneth E. Goodson

Institution: Stanford University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Defense Advanced Research Projects Agency, Air Force Office of Scientific Research

OpenAlex ID: W2068500403

FWCI: 15.5

Cites: 41

Cited by: 57

Related to: 10