Work

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

Year: 2011

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.201103379

Authors: Feng Miao, John Paul Strachan, J. Joshua Yang, Min‐Xian Zhang, Ilan Goldfarb, Antonio C. Torrezan, Peter Eschbach, Ronald D. Kelley, Gilberto Medeiros‐Ribeiro, R. Stanley Williams

Institution: Hewlett-Packard (United States)

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2069418413

FWCI: 19.06

Cites: 62

Cited by: 447

Related to: 10