Year: 2006
Type: article
Abstract: Temperature-dependent polarized microphotoluminescence measurements of single GaAs∕AlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120K, with an activation energy of 17meV reflecting the presence of nonradiative defects.
Source: Applied Physics Letters
DOI: 10.1063/1.2364885
Language: English
Subfield: Biomedical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2069715449
