Work

Impurity ionization in MOSFETs at very low temperatures

Year: 1990

Type: article

Source: Cryogenics

DOI: 10.1016/0011-2275(90)90207-s

Author: Daniel P. Foty

Institution: IBM (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2070071997

FWCI: 3.33

Cites: 33

Cited by: 93

Related to: 10