Thermoelectric Properties of Zn-Sb Thin Films Grown by Ion Beam Sputtering
Year: 2012
Type: article
Abstract: Antimony (Sb) and zinc (Zn) bilayer was sputter-deposited at room temperature with various Zn contents by ion-beam sputtering and transformed into Antimony zinc after post thermal annealed at 573K for 60 min. A power factor of 6.18×10-4 W/mK2 at 473 K has been obtained when the sputtering time of the Zn was 20 minutes. The maximum Seebeck coefficient is 42.0 μVK-1. Composition analysis shows that the compound of SbZn is achieved and the small Seebeck coefficient is due to the deviation of stoichiometric.
Source: Advanced materials research
Institution: Shenzhen University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2070505554