Work

Erratum: Profile estimation of high-concentration arsenic diffusion in silicon

Year: 1973

Type: erratum

Source: Journal of Applied Physics

DOI: 10.1063/1.1661938

Author: R. B. Fair

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2070683927

Cites:

Cited by: 3

Related to: 10