Work

Conductance of p-n-p Graphene Structures with “Air-Bridge” Top Gates

Year: 2008

Type: article

Abstract: We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap-a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realize p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.

Source: Nano Letters

DOI: 10.1021/nl801059v

Authors: Roman V. Gorbachev, Alexander S. Mayorov, Alexander K. Savchenko, David W. Horsell, Francisco Guinea

Institutions: University of Exeter, Instituto de Ciencia de Materiales de Madrid

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: Engineering and Physical Sciences Research Council

Awards: G279983288, Disorder Controlled Quantum Transport in Carbon Nanotubes