Growth of native oxide on a silicon surface
Year: 1990
Type: article
Abstract: The control factors controlling the growth of native silicon oxide on silicon (Si) surfaces have been identified. The coexistence of oxygen and water or moisture is required for growth of native oxide both in air and in ultrapure water at room temperature. Layer-by-layer growth of native oxide films occurs on Si surfaces exposed to air. Growth of native oxides on n-Si in ultrapure water is described by a parabolic law, while the native oxide film thickness on n+-Si in ultrapure water saturates at 10 Å. The native oxide growth on n-Si in ultrapure water is continuously accompanied by a dissolution of Si into the water and degrades the atomic flatness at the oxide-Si interface, producing a rough oxide surface. A dissolution of Si into the water has not been observed for the Si wafer having surface covered by the native oxide grown in air. Native oxides grown in air and in ultrapure de-ionized water have been demonstrated experimentally to exhibit remarkable differences such as contact angles of ultrapure water drops and chemical binding energy. These chemical bond structures for native oxide films grown in air and in ultrapure water are also discussed.
Source: Journal of Applied Physics
DOI: 10.1063/1.347181
Authors: M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, M. Ohwada
Institution: Tohoku University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2070828761