The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate
Work
Year: 2010
Type: article
Source: Journal of Crystal Growth
Institution South China Normal University
Cites: 22
Cited by: 26
Related to: 10
FWCI: 0.798
Citation percentile (by year/subfield): 88.96
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed