Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis
Year: 2009
Type: article
Abstract: Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit applications, these problems need to be tackled. In this paper, a novel lateral strained double-gate TFET (SDGTFET) is presented. Using device simulation, we show that the SDGTFET has a higher on-current, low leakage, low threshold voltage, excellent subthreshold slope, and good short channel effects and also meets important ITRS guidelines.
Authors: Sneh Saurabh, M. Jagadesh Kumar
Institution: Indian Institute of Technology Delhi
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2071036214